Texture and stress analysis of 120 nm copper interconnects
نویسندگان
چکیده
A scanning transmission electron microscope diffraction technique was used to determine the local orientation of copper grains in 120 nm copper interconnect (CI) lines. These grains exhibit a <1 1 0> normal orientation while the < 112 > and the < 1 11 > type orientations are present along the length and width of the CI line, respectively. Stresses, as high as 625 MPa, are present at the copper/diffusion barrier triple junctions that in conjunction with large stress gradients may induce stress-induced void formation upon thermal cycling. 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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